Evolution of Bulk c-Si Properties during the Processing of GaP/c-Si Heterojunction Cell - LN2 - Axe Energie sur puce
Article Dans Une Revue Energy Procedia Année : 2015

Evolution of Bulk c-Si Properties during the Processing of GaP/c-Si Heterojunction Cell

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One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells are optical losses in the amorphous silicon (a-Si:H) layers that limit the short circuit current. In this work, we propose to replace amorphous silicon layers by a thin crystalline gallium phosphide (GaP) layer in heterojunctions solar cells. We show that the better transparency of GaPcompared to a-Si:H promises gain in the UV region. However, the annealing in the MOCVD chamber before GaP growth that is necessary for high quality GaP epitaxial growth degrades the bulk silicon minority carrier lifetime. This degradation is attributed to fast diffusing species and can be overcome by a gettering process.
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hal-01991905 , version 1 (06-09-2024)

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Renaud Varache, Maxime Darnon, Médéric Descazeaux, Mickaël Martin, Thierry Baron, et al.. Evolution of Bulk c-Si Properties during the Processing of GaP/c-Si Heterojunction Cell. Energy Procedia, 2015, 77, pp.493-499. ⟨10.1016/j.egypro.2015.07.070⟩. ⟨hal-01991905⟩
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